摘要： The absorber layer is a key component of thin-film solar cells. Based-on the recently-proposed electronic dimensionality concept, a promising solar cell absorber material should be electronically high-dimensional, as is the case for all the mainstream absorbers, such as Si, GaAs, CIGS, CdTe, and CH3NH3PbI3. In this work, we propose an electronically three-dimensional semiconductor, bournonite CuPbSbS3, as a prospective efficient solar cell absorber material. Our density functional theory calculations indicate that CuPbSbS3 exhibits desired optoelectronic properties, such as a nearly direct bandgap, high optical absorption coefficients, appropriate p-type doping, and defect tolerance. Experimentally, we developed a butyldithiocarbamate acid (BDCA) solution process for depositing high-quality CuPbSbS3 thin films and built the first CuPbSbS3 solar cells. Our CuPbSbS3-based thin film solar cells achieved a preliminary power conversion efficiency of 2.23% (open circuit voltage of 699 mV), highlighting the potential of this semiconductor for thin film photovoltaics.