研究目的
Investigating the performance of pentacene-based high-voltage organic thin-film transistors (HVOTFTs) on both rigid and flexible substrates, focusing on their current–voltage (I–V) characteristics under flexure and the influence of different gate insulators on device performance.
研究成果
Pentacene-based HVOTFTs are viable for high-voltage circuits on flexible substrates, demonstrating minimal degradation under flexure and the ability to be modeled with existing Si-based FET models. Further optimization of device architecture and materials processing could improve mobility and ION/IOFF ratio.
研究不足
The HVOTFTs showed degradation in performance under extended use, suggesting they are best suited for applications requiring short periods of operation. The high electric fields in the device led to impeded charge injection and nonsaturating I–V characteristics, which obscured the impact of gate insulator engineering.
1：Experimental Design and Method Selection:
The study employed a pentacene-based HVOTFT with an offset drain/source structure to enable high-voltage operation. Three different gate insulators were used to assess their impact on device performance. A field plate was implemented to improve charge injection into the gated semiconductor channel.
2：Sample Selection and Data Sources:
The HVOTFTs were fabricated on both rigid (glass) and flexible (Cirlex) substrates. Electrical characteristics were measured under various conditions to evaluate performance.
3：List of Experimental Equipment and Materials:
Equipment included e-beam evaporation for metal deposition, photolithography for patterning, and thermal evaporation for pentacene deposition. Materials included pentacene, parylene-C (PAR), Bi1.5Zn1Nb1.5O7 (BZN), and gold (Au) for electrodes.
4：5Zn1Nb5O7 (BZN), and gold (Au) for electrodes.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The fabrication process involved depositing and patterning gate metals, gate insulators, source/drain electrodes, and the pentacene semiconductor layer. Electrical characterization was performed to measure I–V characteristics under flexure and with different gate insulators.
5：Data Analysis Methods:
The output characteristics of the HVOTFT were numerically corrected to account for space-charge-limited currents (SCLCs) and channel length modulation (CLM), using models derived from Si-based FETs.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
