研究目的
Investigating the phase transformation mechanism in few-layered PdSe2 to create 2D striated lattice systems with 1D sub-nm etched channels in Pd2Se3 bilayers, and exploring their potential in nanoelectronics.
研究成果
The study demonstrates a novel phase transformation mechanism in few-layered PdSe2, leading to the creation of 2D striated lattice systems with 1D sub-nm etched channels. These structures exhibit unique electronic properties, suggesting potential applications in nanoelectronics. The findings extend the family of 2D crystals beyond bulk layered van der Waals materials.
研究不足
The study is limited to the phase transformation of PdSe2 under controlled thermal annealing, and the electronic properties are predicted by DFT calculations without experimental verification.
1:Experimental Design and Method Selection:
Controlled thermal annealing in vacuum near the melting point of PdSe2 to induce Se loss and phase transformation.
2:Sample Selection and Data Sources:
Commercial few-layered PdSe2 grown on a sapphire substrate, transferred to an in situ heating chip for TEM studies.
3:List of Experimental Equipment and Materials:
JEOL ARM200 STEM with a JEOL corrector, in situ heating holder from DENS Solutions, poly(methyl acrylate) (PMMA) scaffold, KOH etching solution.
4:Experimental Procedures and Operational Workflow:
Heating the sample to 400–500 °C in vacuum to induce Se loss and transformation, followed by ADF-STEM imaging.
5:Data Analysis Methods:
Image processing using ImageJ, multislice image simulations using JEMS software, DFT calculations for structural and electronic properties.
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