研究目的
Investigating the extent of shallow/deep trap states beyond conduction band minimum in defect tolerant CsPbBr3 perovskite quantum dots and their control over the degree of charge carrier recombination.
研究成果
The study concludes that defect tolerant CsPbBr3 PQD possesses significant extent of trap/defect states beyond CBM, with minimal shallow trap states up to 1.0 eV above the band-edge. The extent of trap states beyond CBM in CsPbBr3 PQD is significantly less than CdSe/InP based core/alloy-shell QDs. The findings provide insights into the charge carrier dynamics and recombination processes in PQDs, important for energy applications.
研究不足
The study acknowledges that CsPbBr3 PQD is not perfectly 'defect tolerant' as significant blinking is observed even for band-edge excitation. The extent of deep trap states beyond 1.0 eV above the CBM is significant, indicating areas for further optimization.
