研究目的
Investigating the impact of H2 high-pressure annealing (HPA) on InGaAs MOSCAPs and quantum-well (QW) MOSFETs with Al2O3/HfO2 gate-stack to improve device performance and reliability.
研究成果
The HPA process significantly improves the performance and reliability of InGaAs MOSCAPs and MOSFETs by reducing Dit and mitigating VT shift during CVS, attributed to effective passivation of oxide and interfacial traps. This process shows promise for enhancing non-planar InGaAs MOSFETs.
研究不足
The study focuses on the impact of HPA on InGaAs devices with Al2O3/HfO2 gate-stack, and while significant improvements are noted, the generalizability to other materials or gate-stack configurations is not explored. Additionally, the long-term reliability and scalability of the HPA process for industrial applications require further investigation.
1：Experimental Design and Method Selection:
The study involves the fabrication of InGaAs MOSCAPs and MOSFETs with Al2O3/HfO2 gate-stack, followed by HPA under specific conditions to assess its impact on device characteristics.
2：Sample Selection and Data Sources:
InGaAs MOSCAPs and MOSFETs were fabricated using molecular beam epitaxy (MBE) on an InP substrate, with detailed fabrication steps including isolation, ohmic contact formation, gate patterning, and ALD of gate stack materials.
3：List of Experimental Equipment and Materials:
Equipment includes MBE for layer growth, e-beam lithography for gate patterning, ALD for gate stack deposition, and a Poongsan GENI-SYS system for HPA.
4：Experimental Procedures and Operational Workflow:
The process involves device fabrication, HPA application, and subsequent electrical characterization to evaluate improvements in CV characteristics, Dit, SS, and reliability under CVS.
5：Data Analysis Methods:
Data analysis includes CV measurements, Dit extraction using Terman and conductance methods, and assessment of device reliability through CVS.
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