研究目的
To investigate and optimize n-type bifacial solar cells with a rear SiOx/n+:poly-Si passivating contact fabricated using an industrial inline PECVD tool for mass production.
研究成果
Large-area bifacial silicon solar cells with a rear passivating contact consisting of a SiOx/n+:poly-Si stack fabricated by inline PECVD demonstrated excellent performance, achieving a best cell efficiency of 23.05%. The study highlights the potential for mass production with simple process flows.
研究不足
The study acknowledges gaps in knowledge on integrating this cell technology into an industrial-scale process with high-temperature process steps. The fill factor was limited to < 80% in the first study, attributed to non-optimized firing conditions.
1：Experimental Design and Method Selection:
The study used n-type, Cz-Si wafers for fabricating bifacial solar cells with a rear passivating contact. The interfacial SiOx and n+:poly-Si layers were deposited using an inline PECVD tool.
2：Sample Selection and Data Sources:
'M2',
3：3 cm2, n-type, Cz-Si wafers were used. List of Experimental Equipment and Materials:
2 Inline PECVD tool (customized MAiA system, Meyer Burger), commercial fire-through metal pastes, KOH solution, HF acid, and others.
4：Experimental Procedures and Operational Workflow:
The process included saw damage etching, alkaline texturing, RCA clean, boron diffusion, deposition of SiOx and n+:a-Si layers, annealing, passivation, screen printing, and co-firing.
5：Data Analysis Methods:
Transmission electron microscopy (TEM) and energy-dispersive spectroscopic (EDS) areal and line scans were conducted, and full-area I-V measurements were performed.
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