研究目的
Investigating the mechanism of current shunting in flexible Cu2Zn1?xCdxSn(S,Se)4 solar cells fabricated on Mo foils with partial Cd substitution for Zn to improve efficiency and device repeatability.
研究成果
Partial Cd substitution of Zn in flexible Cu2Zn1?xCdxSn(S,Se)4 solar cells significantly improves device efficiency and repeatability by suppressing current shunting loss and enhancing junction quality. The study provides insights into the mechanisms of current shunting and offers a design strategy for improving device uniformity and repeatability.
研究不足
The study is limited to flexible substrates and does not explore rigid substrates. The solution-process may not accommodate higher Cd components, potentially limiting the doping range. The research focuses on current shunting mechanisms and does not extensively explore other performance-limiting factors.
1:Experimental Design and Method Selection:
The study involves fabricating flexible Cu2Zn1?xCdxSn(S,Se)4 solar cells on Mo foils using a green solution-process with partial Cd substitution for Zn. The methodology includes optimizing selenization conditions and analyzing carrier transportation mechanisms.
2:Sample Selection and Data Sources:
Samples were prepared with Cd/(Zn + Cd) molar ratios of 0%, 3%, 5%, 7%, and 10%, keeping other elements unchanged. The precursor solutions were spin-coated on Mo foils and selenized by rapid thermal processing (RTP).
3:List of Experimental Equipment and Materials:
Equipment includes a Rigaku X-ray diffractometer, Raman microscope, scanning electron microscope (FEI Nova NanoSEM450), X-ray photoelectron spectroscope (ESCALAB 250), Keithley 2400 source meter, and Zolix SCS100 QE system. Materials include Cu, Zn, Cd, Sn, S, and Se powders.
4:Experimental Procedures and Operational Workflow:
The precursor solutions were spin-coated on Mo foils, selenized by RTP, and fabricated into solar cells. The cells were characterized for crystal structure, morphology, valence states, J–V curves, C–V curves, and EQE spectra.
5:Data Analysis Methods:
Data analysis involved fitting J–V curves using an equivalent circuit model, calculating device parameters, and analyzing the influence of Cd dopant on carrier concentration, depletion width, and built-in voltage.
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