研究目的
To present new circuit blocks for physical random number generation (RNG), based on the coupling of two resistive-switching memory (RRAM) devices, overcoming the need for probability tracking.
研究成果
The paper presents three new concepts for unbiased RNG relying on switching variability in RRAM, demonstrating the potential of RRAM technology for future on-chip RNG applications. The results of the randomness tests support the two-RRAM scheme for generating true random numbers with high entropy quality and high throughput.
研究不足
The study acknowledges the need for von Neumann correction to improve the randomness of the RNG output, which introduces additional complexity in terms of controller logic of the RNG circuit.
1：Experimental Design and Method Selection:
The study involves designing new circuit blocks for physical RNG using two coupled RRAM devices. The methodology includes the use of stochastic switching in RRAM devices for generating random numbers without the need for probability tracking.
2：Sample Selection and Data Sources:
The devices used are bipolar RRAMs consisting of a Si-doped HfO2 switching layer with TiN bottom electrode and Ti top electrode.
3：List of Experimental Equipment and Materials:
The experimental setup includes 1T1R structures for proper control of the resistance level by limiting the current of the integrated select transistor.
4：Experimental Procedures and Operational Workflow:
The RNG cycle consists of three phases: application of a positive voltage across P and Q to induce set transition; application of a negative voltage to induce reset transition; and read, where the voltage divider of P and Q is evaluated.
5：Data Analysis Methods:
The randomness of the generated numbers is tested using the standard set of statistical tests developed by the National Institute of Standards and Technology (NIST).
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