研究目的
Designing and producing matrix photosensitive elements based on a HgCdTe semiconductor solid solution on silicon substrates for midwave infrared detection, focusing on achieving high performance parameters such as low NETD and high workable element count.
研究成果
The research successfully developed and manufactured 640 × 512-element matrix photodetectors with high performance, including low NETD and high workability. The technology demonstrates potential for applications requiring midwave infrared detection, with parameters stable up to 130 K.
研究不足
The study acknowledges the challenge of defect density in CMT-based IRPTs, which historically reduced image quality, though recent advancements have improved workability. The research also notes the potential for further optimization in operating temperature and SWaP parameters.
1：Experimental Design and Method Selection:
The study involved the design and production of matrix photosensitive elements using HgCdTe semiconductor solid solution on silicon substrates. The methodology included molecular beam epitaxy for growing heteroepitaxial structures and hybrid assembly methods for photodetector fabrication.
2：Sample Selection and Data Sources:
CdxHg1 – xTe/CdTe/ZnTe/Si(013) heteroepitaxial structures were used, with specific attention to defect density and size distribution.
3：List of Experimental Equipment and Materials:
Equipment included a Ob’-M facility for MBE, KEITHLEY 6517B electrometer for I-V measurements, and a gas cryogenic Stirling machine for cooling.
4：Experimental Procedures and Operational Workflow:
The process included thermal annealing, passivation, ion implantation for n–p junctions, and indium bump deposition for microcontacts.
5：Data Analysis Methods:
Performance parameters such as NETD and workable element count were analyzed to evaluate photodetector quality.
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