研究目的
To investigate and optimize the four-wave mixing (FWM) process in dual-interferometer coupled silicon microrings under different pumping conditions (continuous-wave and pulse pump) to enhance the conversion efficiency for on-chip all-optical signal processing applications.
研究成果
The study successfully demonstrated that the FWM efficiency in dual-interferometer coupled silicon microrings can be optimized by independently tuning the coupling conditions of the pump and signal/idler beams. For CW pump, the maximum efficiency is achieved at the critical coupling point, while for pulse pump, overcoupling conditions are preferable. This provides a valuable method for enhancing on-chip all-optical signal processing efficiency.
研究不足
The study is limited by the fabrication precision of the microrings and the control over the coupling conditions. Additionally, the impact of two-photon absorption and free-carrier absorption at higher pump powers was not extensively explored.
1：Experimental Design and Method Selection:
The study involved designing and fabricating dual-interferometer coupled silicon microrings to independently engineer the coupling conditions of pump, signal, and idler beams. Both continuous-wave and pulse pumped FWM experiments were conducted to analyze the conversion efficiency dependence on coupling conditions.
2：Sample Selection and Data Sources:
A series of 12 dual-interferometer coupled silicon microrings were fabricated on a single SOI chip with varying coupling gaps to study different coupling conditions.
3：List of Experimental Equipment and Materials:
The setup included CW and pulse lasers, polarization controllers, a dense wavelength division multiplexer (DWDM), fiber array (FA), and power meters (PM).
4：Experimental Procedures and Operational Workflow:
The pump and signal beams were coupled into the microrings, and the idler output was measured. The resonance of the pump and signal was monitored, and the idler power was recorded.
5：Data Analysis Methods:
The conversion efficiency was calculated based on the measured idler power and signal power, considering the on-chip propagation loss and quality factors of the resonators.
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