研究目的
To enhance the frequency response of InAs/GaSb/AlSb based type-II superlattice (T2SL) e-SWIR photodetectors by transferring them from native GaSb substrates to low-loss sapphire substrates.
研究成果
The transfer of e-SWIR T2SL based photodetectors from native GaSb substrates onto low-loss sapphire substrates resulted in improved room-temperature high frequency operation of the device, with the ?3 dB cut-off frequency increasing from 6.4 to 17.2 GHz for 8 μm diameter circular mesas at ?15 V applied bias.
研究不足
The study notes that performing high temperature SiO2 deposition after the transfer can degrade the thin film quality and create cracks on the surface, making the sample unsuitable for further processing and testing.
1：Experimental Design and Method Selection:
The study involved the design and fabrication of T2SL e-SWIR photodetectors on GaSb substrates, followed by their transfer to sapphire substrates using a chemical epilayer release technique.
2：Sample Selection and Data Sources:
The photodetectors were fabricated on Te-doped n-type GaSb wafers using a GEN II solid-source molecular beam epitaxy reactor.
3：List of Experimental Equipment and Materials:
Equipment included an inductive couple plasma reactive ion etching system, electron beam evaporation for metal deposition, and a plasma enhanced chemical vapor deposition system. Materials included Ti/Au for ohmic contacts and SiO2 for protection.
4：Experimental Procedures and Operational Workflow:
The process involved mesa definition, metal contact deposition, SiO2 deposition, substrate removal, and transfer to sapphire.
5：Data Analysis Methods:
The frequency response was measured using a spectrum analyzer, and dark current density was measured with a semiconductor parameter analyzer.
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