1：Experimental Design and Method Selection:

SEM analysis and surface morphology were performed on grid elements of both mono and poly crystalline solar cells. Numerical simulations were performed using Altermatt2006 for Ionisation Model, Passler2002 for Intrinsic Band Gap, Sentaurus2008 DOS Form.2 for Density of States, Fermi-Dirac for carrier statistics, and Schenk 1998 for Band gap narrowing. 5 Million Sun Ray tracings were considered for the entire simulation.

2：Sample Selection and Data Sources:

Two solar cell samples (Mono-Crystalline and Poly-Crystalline) were considered for SEM Analysis.

3：List of Experimental Equipment and Materials:

SEM for analysis, c-Silicon as Semiconductor at Temperature 400 K with Dopants (Boron with substitutional concentration of 1E +16 cm?3, phosphorus with 1E+4 cm?3).

4：3). Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Detailed SEM analysis was performed to observe internal gaps, rupture, improper screen printing etc. Aperture was increased to 10 μm with EHT of 22 kV for finding the holes/gap in the finger formation.

5：Data Analysis Methods:

The power loss in the fingers was calculated based on the current at maximum power point and the finger spacing.