研究目的
Investigating the application of separate BBr3 diffusion processes for green-laser-doped selective emitters to improve the efficiency of n-type silicon solar cells.
研究成果
The separate BBr3 diffusion processes for green-laser-doped selective emitters significantly improve the efficiency of n-type silicon solar cells by reducing emitter recombination and contact resistance, and enhancing blue response. The optimized process demonstrates the potential for industrial application with improved VOC, FF, and efficiency.
研究不足
The study is limited by the specific conditions of the BBr3 diffusion processes and the use of green laser doping, which may not be directly applicable to all types of silicon solar cells or other doping methods.
1：Experimental Design and Method Selection:
The study involved the fabrication of boron selective emitters on n-type silicon wafers using separate BBr3 diffusion processes, including BSG deposition, B driving in, and post-oxidation, followed by green laser doping.
2：Sample Selection and Data Sources:
1 Ω cm n-type Czochralski-grown wafers with a thickness of 180 μm were used. The samples were characterized using ECV measurements, four-point probe measurements, SEM, and other techniques.
3：List of Experimental Equipment and Materials:
Nd:YAG laser with a wavelength of 532 nm, BBr3 tube furnace, AgAl pastes, Al2O3/SiNx stack films for passivation.
4：Experimental Procedures and Operational Workflow:
The process included damage etching, alkaline texturing, cleaning, BSG deposition, B driving in, laser doping, post-oxidation, and characterization.
5：Data Analysis Methods:
The data were analyzed using ECV for boron concentration profiles, four-point probe for sheet resistances, SEM for surface morphology, and Sinton WCT-120 for J0e, passivated analysis.
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