研究目的
Investigating the effect of high temperature annealing on the crystalline quality improvement of h-BN films grown on sapphire substrates by molecular beam epitaxy.
研究成果
High temperature annealing is an effective method to transform MBE-grown BN films into highly ordered h-BN at wafer scale. The annealed BN films show improved crystalline quality and have potential applications in next-generation two-dimensional devices and flexible III-nitride optoelectronic devices.
研究不足
The study is limited by the high temperature requirements for annealing, which may not be feasible for all applications. Additionally, the thickness of the BN films affects the annealing outcome, with thicker films requiring longer annealing times for optimal crystalline quality.
1：Experimental Design and Method Selection:
The study involved the growth of BN films on 2-in. (0001) Al2O3 substrates using a PREVAC plasma-assisted MBE system, followed by high temperature annealing in a high temperature furnace (GSL-1800X-S) using a corundum tube.
2：Sample Selection and Data Sources:
The samples were BN films grown on sapphire substrates, with various thicknesses and annealing conditions.
3：List of Experimental Equipment and Materials:
PREVAC plasma-assisted MBE system, high temperature furnace (GSL-1800X-S), corundum tube, graphite plates, purified N2 gas.
4：Experimental Procedures and Operational Workflow:
The BN films were grown at 900 °C, then annealed at temperatures ranging from 1500 to 1700 °C for 2 to 4 hours. The crystalline quality was assessed using XRD, Raman scattering, AFM, SEM, FTIR, TEM, and CL measurements.
5：Data Analysis Methods:
The data were analyzed to assess the crystalline quality, strain distribution, and emission properties of the BN films.
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