研究目的
Investigating the highly sensitive and self-driven near-infrared (NIR) light photodetector based on PdSe2/pyramid Si heterojunction arrays for broadband photodetection application.
研究成果
The present self-powered photodetector may be potential significant for future NIR optoelectronic devices and systems.
研究不足
The fabrication of these semiconductor heterojunctions usually entails the usage of very complicated methods such as molecular beam epitaxy (MBE) or metal–organic chemical vapor deposition (MOCVD), leading to relatively high production cost.
1：Experimental Design and Method Selection:
The device was fabricated by directly selenizing Pd nanofilm on the surface of pyramid Si. Finite-difference time-domain (FDTD) modeling was used to simulate the electric field distribution.
2：Sample Selection and Data Sources:
Pyramid Si was prepared by alkaline etching of n-type lightly doped silicon wafer. PdSe2 film was grown on top of the pyramid Si.
3：List of Experimental Equipment and Materials:
FESEM (SU8020), AFM (Benyuan Nanotech Com, CSPM-4000), XRD (Rigaku D/max-rB), HRTEM (JEM-2100F), Raman spectrometer (Horiba Jobin Yvon, LabRAM HR800), EDS (SU8020), XPS (ESCALAB250Xi), UV–vis spectrophotometer (UV-2550, Shimadzu, Japan), semiconductor characterization system (Keithley 2400), different laser diodes with wavelengths of 980 nm (Tanon Company, UV-100), 1300 nm (Thorlabs, M1300L3), 1550 nm (Thorlabs, M1550L3), and 1650 nm (Thorlabs, M1650L3).
4：3). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The pyramid Si was synthesized through a simple alkali etching method. PdSe2 film was grown on top of the pyramid Si. The device was characterized by various techniques.
5：Data Analysis Methods:
The responsivity, external quantum efficiency (EQE), and specific detectivity were calculated using the provided equations.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容-
UV–vis spectrophotometer
UV-2550
Shimadzu
Performance of the absorption of the film.
暂无现货
预约到货通知
-
Laser diode
M1300L3
Thorlabs
Illumination source with wavelength of 1300 nm.
立即获取同款设备
-
Laser diode
M1550L3
Thorlabs
Illumination source with wavelength of 1550 nm.
立即获取同款设备 -
Laser diode
M1650L3
Thorlabs
Illumination source with wavelength of 1650 nm.
立即获取同款设备 -
Power meter
PM 100D
Thorlabs GmbH
Calibration of the power intensity of all light sources.
暂无现货
预约到货通知
-
FESEM
SU8020
Characterization of the morphology of the as-fabricated PdSe2, pyramid Si, and multilayer PdSe2/pyramid Si films.
暂无现货
预约到货通知
-
AFM
CSPM-4000
Benyuan Nanotech Com
Measurement of the film thickness of PdSe2 on planar Si.
暂无现货
预约到货通知
-
XRD
Rigaku D/max-rB
Analysis of the crystal structures of PdSe2 film.
暂无现货
预约到货通知
-
HRTEM
JEM-2100F
Investigation of the crystal structure of the as-prepared PdSe2.
暂无现货
预约到货通知
-
Raman spectrometer
LabRAM HR800
Horiba Jobin Yvon
Performance of Raman spectra of PdSe2.
暂无现货
预约到货通知
-
EDS
SU8020
Analysis of the chemical composition of the PdSe2 film.
暂无现货
预约到货通知
-
XPS
ESCALAB250Xi
Analysis of the chemical composition of the PdSe2 film.
暂无现货
预约到货通知
-
Semiconductor characterization system
Keithley 2400
Measurement of the electrical and optical characteristics of the as-fabricated device.
暂无现货
预约到货通知
-
Laser diode
UV-100
Tanon Company
Illumination source with wavelength of 980 nm.
暂无现货
预约到货通知
-
登录查看剩余12件设备及参数对照表
查看全部
