研究目的
To design and fabricate an MoS2-based polarization photodetector induced by anisotropic plasmonic nanostructure, enabling polarization sensitivity and enhanced responsivity.
研究成果
The anisotropic gold-MoS2 hybrid polarization photodetector successfully achieved polarization detection of 660 nm laser light with a photocurrent ratio of 1.45 along two perpendicular polarizations. The integration of anisotropic plasmonic structures on MoS2 nanosheets not only induced polarization photoresponse but also enhanced the device's responsivity. This approach offers a promising technique for overcoming the limitations of isotropic materials in polarization photodetector applications.
研究不足
The study is limited by the specific design and fabrication techniques used, which may not be universally applicable to all 2D materials or photodetector configurations. Additionally, the enhancement in responsivity and polarization sensitivity may vary with different nanostructure geometries and materials.
1：Experimental Design and Method Selection:
The study involved the design of an anisotropic gold-MoS2 hybrid polarization photodetector based on finite different time domain (FDTD) simulation and fabricated by micromachining technique.
2：Sample Selection and Data Sources:
Few-layer MoS2 flakes were obtained from MoS2 single crystals and transferred onto a silicon wafer.
3：List of Experimental Equipment and Materials:
Materials included MoS2 single crystals, high doped p-type silicon substrates with a SiO2 layer, gold and chrome particles, PMMA 950k, MIBK, Scotch tape, isopropanol, and acetone. Equipment included electron beam lithography (EBL) and e-beam evaporation systems.
4：Experimental Procedures and Operational Workflow:
The fabrication process involved transferring MoS2 flakes onto a silicon wafer, spin-coating PMMA, and using EBL and e-beam evaporation to deposit gold nanoellipse arrays and electrodes.
5：Data Analysis Methods:
The performance of the photodetector was evaluated through electrical measurements, including output characteristics and photoresponse under polarized light.
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Beam shutter
SH05
Thorlabs
Used for the laser switch.
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Benchtop shutter controller
SC10
Thorlabs
Used for the laser switch.
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Atomic force microscope (AFM)
Bruker Dimension ICON
Bruker
Used to characterize the device morphology.
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Keithley 4200 Semiconductor Characteristic Analyzer System
4200 SCS
Keithley
Used to obtain the electrical properties of the MoS2 FET.
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MoS2 single crystals
Nanjing Muke Nanotechnology Co., Ltd.
Used as the base material for the photodetector.
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High doped p-type silicon substrates with a SiO2 layer
300 nm
Nanan Electronic Business Department, Gongshu District, Hangzhou
Used as the substrate for the photodetector.
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Gold and chrome particles
Zhongnuo New Material Technology Co., Ltd.
Used for the fabrication of electrodes and plasmonic nanostructures.
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PMMA 950k
950k
Beijing Huidexin Technology Co., Ltd.
Used as photoresist in the fabrication process.
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MIBK
Beijing Huidexin Technology Co., Ltd.
Used as developer in the fabrication process.
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Scotch tape
Suzhou special new electronic material Co., Ltd.
Used for the exfoliation of MoS2 flakes.
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Isopropanol
Sigma Aldrich Trading Co., Ltd.
Used in the cleaning process.
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Acetone
Sigma Aldrich Trading Co., Ltd.
Used in the cleaning process.
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Electron beam lithography (EBL) system
Raith PIONEER Two
Raith
Used for the fabrication of gold nanoellipse arrays and electrodes.
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E-beam evaporation system
ASB-EPI-C6
Siqi Technology Co., Ltd
Used for the deposition of gold nanoellipse arrays and electrodes.
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Newport 818-UV21 optical power meter
818-UV21
Newport
Used to record light intensity.
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Laser confocal Raman spectrometer
Horiba LabRAM HR800
Horiba
Used to measure the Raman spectrum.
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Scanning electron microscope (SEM)
Phenom ProX
Phenom
Used to characterize the device morphology.
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Glan prism
Used to obtain linearly polarized light.
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Half-wave plate
Used to adjust the polarized angle.
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