研究目的
To mitigate the poor electrical conductivity arising from Ag substitution in Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic (PV) technology through a versatile Li-Ag co-doping strategy.
研究成果
The Li-Ag co-doped CZTSSe system achieved the highest efficiency of 10.29%. The lithium-assisted electrical performance enhancement inspires us that synergistic engineering of charge collection both in GBs and GI is more critical for future development of CZTSSe PV technology.
研究不足
The fabricated CAZTSSe device still presents a quite lower Voc (440.0 mV) in comparison to the characteristics of previous DGIST (541.1 mV) and IBM (513.4 mV) record cells.
1:Experimental Design and Method Selection:
A Li-Ag co-doping strategy was employed by directly incorporating Li via post-deposition treatment (PDT) on top of the Ag-substituted CZTSSe absorber.
2:Sample Selection and Data Sources:
CAZTSSe precursor solution was prepared and spin-coated on molybdenum coated soda-lime glass (SLG) substrate, followed by selenization.
3:List of Experimental Equipment and Materials:
Equipment included a Zolix SS150 simulator, ZEISS Supra55 scanning electron microscopy (SEM), ION TOF-SIMS 5 system, Bruker D8 Advance X-ray diffractometer, Renishaw inVia Raman microscope, and Dimension Icon atomic force microscopy (AFM) system. Materials included Ag2O, Cu2O, ZnO, SnO, ethanol, 1-butylamine, carbon disulfide, and thioglycolic acid.
4:Experimental Procedures and Operational Workflow:
The CAZTSSe precursor solution was spin-coated and annealed, followed by selenization and alkali-fluoride PDT. Devices were fabricated based on the standard structure of Ag/ITO/i-ZnO/CdS/CAZTSSe/Mo/SLG.
5:Data Analysis Methods:
Current density-voltage (J-V) measurements, external quantum efficiency (EQE) response, X-ray diffraction (XRD), Raman spectrum, electrochemistry impedance spectroscopy (EIS), capacitance–voltage (C-V), deep-level transient spectroscopy (DLTS), and Kelvin probe force microscopy (KPFM) measurements were performed.
独家科研数据包,助您复现前沿成果,加速创新突破
获取完整内容-
Zolix SS150 simulator
Sirius-SS150A-D
Zolix
Current density-voltage (J-V) measurements
-
ZEISS Supra55 scanning electron microscopy
ZEISS
Observed CAZTSSe thin film morphology
-
ION TOF-SIMS 5 system
ION TOF
Investigate the depth compositional profiles
-
Bruker D8 Advance X-ray diffractometer
Bruker
X-ray diffraction measurement
-
Renishaw inVia Raman microscope
Renishaw
Raman spectrum
-
Dimension Icon atomic force microscopy system
Bruker
Kelvin probe force microscopy (KPFM) measurements
-
登录查看剩余4件设备及参数对照表
查看全部