研究目的
To develop bifacial solar cells suitable for low-concentration systems from commercially available, standard monofacial SiNx/(n+pp+)Cz-Si/Al structures with full-area Al-alloyed Al-p+ back-surface-field, and to analyze the thinning-induced changes in the properties of these cells.
研究成果
Thinning the Al-p+ layer significantly improved the efficiency of bifacial solar cells under both front and rear illumination. The best performance was achieved with a sheet resistance of 81 Ω/sq, demonstrating the potential of monofacial SiNx/(n+pp+)Cz-Si/Al structures with Al-alloyed Al-p+ BSF for the fabrication of bifacial solar cells suitable for low-concentration systems.
研究不足
The study is limited by the use of precursors optimized for monofacial rather than bifacial solar cells, necessitating additional one-sided etching to thin the Al-p+ layer. The operating range of sunlight concentration for the developed cells is limited to 3.4–6.3 suns.
1:Experimental Design and Method Selection:
The study involved the fabrication of bifacial solar cells from monofacial SiNx/(n+pp+)Cz-Si/Al structures by removing the residual Al paste and thinning the Al-p+ layer using a one-sided etch-back process. The sheet resistance of the Al-p+-BSF was varied to study its effect on cell performance.
2:Sample Selection and Data Sources:
Commercially available, standard monofacial SiNx/(n+pp+)Cz-Si/Al structures were used. The structures were made from p-type Czochralski (Cz) silicon wafers.
3:List of Experimental Equipment and Materials:
Equipment included a conveyor belt furnace for firing, hydrochloric acid for etching, and ultrasonic spray pyrolysis for TCO layer growth. Materials included aluminum paste, In2O3:Sn (ITO), and In2O3:F (IFO) films.
4:Experimental Procedures and Operational Workflow:
The process involved removing the Al paste, thinning the Al-p+ layer, removing SiNx layers, thinning n+ emitters, growing TCO layers by ultrasonic spray pyrolysis, attaching copper wires to the solar cell surfaces, and encapsulating the solar cell.
5:Data Analysis Methods:
External quantum efficiency (EQE) spectra were obtained, and I–V measurements under elevated intensity flash illumination were performed. Series resistance was determined by comparing several I–V curves measured at different front illumination intensities.
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