研究目的
To develop a preannealing process to achieve high-quality CsPbI2Br films and improve the performance and stability of dopant-free P3HT-based perovskite solar cells.
研究成果
The preannealing strategy and the introduction of a TFB buffer layer significantly improved the film quality, device performance, and stability of dopant-free P3HT-based CsPbI2Br PSCs, achieving a record-high PCE of 15.50%.
研究不足
The efficiency of CsPbI2Br PSCs is still lower than those of hybrid organic–inorganic PSCs and even CsPbI3 devices.
1：Experimental Design and Method Selection:
A preannealing process was developed to regulate the nucleation and crystallization of CsPbI2Br films. The preannealing temperature and time were optimized for dopant-free P3HT-based devices.
2：Sample Selection and Data Sources:
CsPbI2Br precursor was prepared by dissolving 1.2 mol L?1 CsPbI2Br in dimethyl sulfoxide (DMSO) solvent.
3：2 mol L?1 CsPbI2Br in dimethyl sulfoxide (DMSO) solvent.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: X-ray diffraction measurements, scanning electron microscope (SEM), atomic force microscopic (AFM), UV–vis spectra, steady-state and time-resolved photoluminescence (PL) measurements, Nyquist plots, Mott–Schottky plots.
4：Experimental Procedures and Operational Workflow:
The as-coated CsPbI2Br film was preannealed at relatively low temperature followed by normal annealing at 160°C for 10 min to form the final film.
5：Data Analysis Methods:
XRD patterns, SEM images, AFM images, UV–vis spectra, PL measurements, Nyquist plots, and Mott–Schottky plots were analyzed to evaluate the film quality and device performance.
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