研究目的
The investigation of the temporal behaviour of the susceptibility to the probe field, since the moment when the probe and control field are turned on until the moment when the stationary regime of the EIT is achieved.
研究成果
The study demonstrates the transient behavior of the susceptibility in a quantum dot system under EIT conditions, showing damped oscillations and amplification of the probe laser light before reaching a stationary regime. The effects of control Rabi frequency and dephasing rates on the transient regime are analyzed, with potential applications in all-optical switches and high-frequency modulation.
研究不足
The study is theoretical and does not involve experimental verification. The values of decay rates vary widely depending on temperature, and the study assumes specific values for these rates.
1：Experimental Design and Method Selection:
The study involves solving optical Bloch equations numerically and analytically to investigate the transient evolution of the susceptibility of a spherical quantum dot with an on-center hydrogen impurity under the influence of continuous wave lasers.
2：Sample Selection and Data Sources:
The system considered is a GaAs spherical quantum dot with an on-center hydrogen impurity, forming a three-level ladder configuration with the states 1s0, 2p-1, and 3d-
3：List of Experimental Equipment and Materials:
The study is theoretical and does not involve physical equipment or materials.
4：Experimental Procedures and Operational Workflow:
The optical Bloch equations are solved under the dipole and rotating-wave approximation in a rotating frame, with initial conditions set to the ground state.
5：Data Analysis Methods:
The susceptibility is calculated from the density matrix elements obtained by solving the optical Bloch equations, with variations in control Rabi frequency, dephasing rates, and laser detunings studied.
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