研究目的
To present a method to realize a direct chip-to-waveguide transition by means of commercial wire-bonding tools for a frequency range of 140 GHz to 220 GHz (G-Band).
研究成果
A method was presented to directly package integrated circuits into waveguide modules by means of wire-bonding. The transition is realized as an E-field probe, which is formed by a freely suspended bondwire and mounted to a standard RF pad. This solution offers an area- and cost-efficient way to directly interface mm-wave circuits. The measurement return loss of a back-to-back configuration is above 10 dB, while the deembedded insertion loss of a single transition is below 1 dB and agrees well with the simulations.
研究不足
The manual assembly limits the accuracy of each step to around 20 μm. The manufacturing process leaves some processing marks on the waveguide walls, which increase the surface roughness and consequently the losses.