研究目的
To investigate the properties of the Fe/Si bilayer before the fabrication of the Cu/Fe/Si contact for solar cells, focusing on the variation of electrical properties with Fe thin film thickness and deposition rate.
研究成果
The study demonstrates that Fe thin films on Si(100) substrates exhibit desirable properties for use as a diffusion barrier in Cu/Fe/Si solar cell contacts, including uniform surface morphology, low surface roughness, minimal strain, and no interdiffusion at the Fe/Si interface. The electrical properties of the Fe films are influenced by the grain size to film thickness ratio and deposition conditions, suggesting that these parameters can be optimized for specific applications.
研究不足
The study focuses on the Fe/Si bilayer and does not extend to the full Cu/Fe/Si system. The electrical properties are influenced by the deposition conditions, which may limit the generalizability of the findings.
1：Experimental Design and Method Selection:
The study involved the evaporation of Fe thin films onto Si(100) substrates under high vacuum conditions, with variations in film thickness and deposition rates. The structural properties were analyzed using x-ray diffraction (XRD), and the Fe thickness was measured using Rutherford backscattering spectroscopy (RBS). Electrical properties were measured using the four-point probe technique to obtain sheet resistance values.
2：Sample Selection and Data Sources:
Samples were prepared with different thicknesses of Fe films and various deposition rates. The substrates used were Si(100).
3：0).
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: High vacuum evaporation system, Fe powder (99.99% purity), Si(100) substrates, x-ray diffraction (XRD) equipment, Rutherford backscattering spectroscopy (RBS) setup, four-point probe setup.
4：99% purity), Si(100) substrates, x-ray diffraction (XRD) equipment, Rutherford backscattering spectroscopy (RBS) setup, four-point probe setup.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Fe thin films were evaporated onto Si(100) substrates. The thickness and deposition rates were varied. Structural characterization was performed using XRD and RBS. Electrical measurements were conducted using the four-point probe technique.
5：Data Analysis Methods:
The sheet resistance was derived from voltage and current measurements using a form factor. Resistivity was calculated from the sheet resistance and film thickness. The relationship between resistivity and grain size to film thickness ratio (D/t) was analyzed.
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