1：Experimental Design and Method Selection:

The study involved the growth of large-area, continuous monolayer MoS2 on sapphire substrates using a CVD system, followed by the deposition of a 3-nm Al2O3 layer via ALD to act as a stress liner. The photodetectors were then fabricated using standard semiconductor processes.

2：Sample Selection and Data Sources:

Monolayer MoS2 films were grown on (0001)-oriented sapphire substrates. The materials used included MoO3 and sulfur powder for the CVD process, and TMAl for the ALD process.

3：List of Experimental Equipment and Materials:

A CVD system with two zones, an ALD system, a confocal Renishaw system for Raman spectroscopy, a VG Escalab 220i-XL system for XPS, a Shimadzu-2450 UV-visible spectrometer for absorbance measurements, and a Keithley 4200-SCS semiconductor analyzer for I-V characteristics and responsivity measurements.

4：Experimental Procedures and Operational Workflow:

The MoS2 growth involved heating MoO3 to 750°C and sulfur to 200°C in an Ar atmosphere. The Al2O3 deposition was performed at 300°C using TMAl and H2O. Photodetectors were fabricated with Ti/Au electrodes.

5：2O. Photodetectors were fabricated with Ti/Au electrodes. Data Analysis Methods:

5. Data Analysis Methods: The performance of the photodetectors was evaluated through photocurrent, responsivity, gain, NEP, and detectivity measurements. First-principles calculations were used to simulate the strain effect of Al2O3 on monolayer MoS2.