摘要： Hot-electrons dominate the ultrafast (～fs-ps) optical and electronic properties of metals and semiconductors and they are exploited in a variety of applications including photovoltaics and photodetection. Here we perform power-dependent third harmonic generation (THG) measurements on gated single layer graphene (SLG) and we show that hot-electrons modulate significantly the power-law dependence of THG, inducing a large deviation from the expected cubic power-law. We use a Chemical Vapor Deposition (CVD) SLG sample transferred on Fused Silica (FS) and gated by ionic liquid (IL), Fig.1(a). We excite the sample with the idler beam of an Optical Parametric Oscillator (OPO, Coherent) at a photon energy of ?ω0=0.69eV. The OPO is seeded by a mode-locked Ti:Sa laser (Coherent) with 150fs pulse duration and 80MHz repetition rate. The OPO idler spot-size is～4.7μm and the pulse duration ～300fs.