摘要： Tuning bandgap and phases in the ternary 2D transition metal dichalcogenides (TMDs) alloys has opened up unexpected opportunities to engineer optoelectronic properties and explore potential applications. In this work, a salt-assisted chemical deposition vapor (CVD) growth strategy is reported for the creation of high-quality monolayer W1?xRexS2 alloys to fulfill a readily phase control from 1H to DT by changing the ratio of Re and W precursors. The structures and chemical compositions of doping alloys are confirmed by combining atomic resolution scanning transmission electron microscopy-annular dark field imaging with energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy, matching well with the calculated results. The field-effect transistors (FETs) devices fabricated based on 1H-W0.9Re0.1S2 monolayer exhibit a n-type semiconducting behavior with the mobility of 0.4 cm2 V?1 s?1. More importantly, the FETs show high-performance responsivity with a value of 17 μA W?1 in air, which is superior to that of monolayer CVD-grown WS2. This work paves the way toward synthesizing monolayer ternary alloys with controlled phases for potential optoelectronic applications.