研究目的
Investigating the effect of RF-sputtered nickel oxide (NiO) compact layers on the photovoltaic performance of dye-sensitized solar cells (DSSCs), specifically focusing on the thickness-dependent hole-blocking capability of NiO at the interface between FTO and TiO2.
研究成果
RF-sputtered NiO thin films effectively suppress interfacial recombination loss in DSSCs, leading to improved photovoltaic performance. An optimal NiO thickness (10 min coating) enhances charge collection efficiency, while excessive thickness diminishes performance.
研究不足
The study is limited by the sensitivity of charge transport to NiO thickness, where an optimal thickness (10 min coating) is required for maximum efficiency. Further increases in thickness reduce performance due to decreased tunneling probability.
1：Experimental Design and Method Selection:
The study utilized RF sputtering to coat NiO thin films on FTO substrates to assess their impact on DSSC performance. The thickness of NiO films was varied by adjusting the sputtering time (5, 10, and 15 min).
2：Sample Selection and Data Sources:
FTO-coated glass substrates were used as the base for NiO and TiO2 layers. The NiO films were characterized using SEM, XPS, and UV-Visible spectroscopy.
3：List of Experimental Equipment and Materials:
JSM-6490-LA SEM from JEOL, Kratos Analytical XPS unit, Perkin Elmer Lambda-750 UV-Visible spectrometer, Newport Oriel Class A solar simulator, Keithley 2400 digital source meter, Autolab electrochemical workstation.
4：Experimental Procedures and Operational Workflow:
NiO thin films were coated on FTO substrates via RF sputtering. Mesoporous TiO2 layers were then applied using the doctor blade method. DSSCs were fabricated with and without NiO compact layers and characterized under AM 1.5 illumination.
5：5 illumination.
Data Analysis Methods:
5. Data Analysis Methods: The performance of DSSCs was evaluated through J-V characteristics, EIS measurements, and EQE spectra analysis.
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