研究目的
To develop a strategy for the controlled synthesis of large and uniform gallium selenide (GaSe) crystals for various applications based on its attractive properties.
研究成果
The study successfully developed a strategy for the controlled growth of large-size and homogeneous triangle GaSe nanoflakes by adjusting the Ga/Se ratio in the precursor. The as-grown GaSe nanosheets exhibited excellent optoelectronic properties, demonstrating the potential for applications in next-generation optoelectronics.
研究不足
The study focuses on the controlled growth of GaSe nanosheets but does not extensively explore the scalability of the method for industrial applications. The influence of environmental factors on the growth process is also not thoroughly investigated.
1：Experimental Design and Method Selection:
The study employed a vapor phase growth method in a single-zone furnace to synthesize 2D GaSe nanosheets. The Ga/GaSe ratio in the precursor was adjusted to control the shape and size of the nanosheets.
2：Sample Selection and Data Sources:
Ga2Se3 powder and Ga pellets were used as sources. The nanosheets were grown on 280 nm SiO2/Si substrates.
3：List of Experimental Equipment and Materials:
A single-zone furnace, Ga2Se3 powder (
4：99%, Alfa Aesar), Ga pellets (99%, Alfa Aesar), and 280 nm SiO2/Si substrates were used. Experimental Procedures and Operational Workflow:
The sources were heated to 940 °C for 20 min under an Ar/H2 (10%) flow. The nanosheets were characterized using SEM, AFM, Raman spectroscopy, PL spectrum, UV/Vis spectrophotometer, and HRTEM.
5：Data Analysis Methods:
The shape and size of the nanosheets were analyzed based on SEM and AFM images. The optical and electronic properties were evaluated using Raman spectroscopy, PL spectrum, and UV/Vis spectrophotometer.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容-
UV/Vis spectrophotometer
Shimadzu UV-2250
Shimadzu
Used for acquiring the absorption spectrum.
-
high-resolution transmission electron microscopy
FEI Tecnai F20
FEI
Used for investigating the crystal quality.
-
precision source/measurement unit
Keysight B2902A
Keysight
Used for carrying out the photoresponse measurements.
-
scanning electron microscope
Hitachi S-4800
Hitachi
Used for inspecting the as-grown nanosheets.
-
Ga2Se3 powder
99.99%
Alfa Aesar
Used as a source material for the synthesis of GaSe nanosheets.
-
Ga pellets
99.99%
Alfa Aesar
Used as a source material for the synthesis of GaSe nanosheets.
-
SiO2/Si substrate
280 nm
Used as a substrate for the growth of GaSe nanosheets.
-
atomic force microscope
Bioscope system
Used for measuring the thickness of the nanosheets.
-
Raman spectrometer
invia-reflex confocal inverted micro-Raman spectrometer
Used for measuring Raman spectroscopy and photoluminescence spectrum.
-
laser diode
405 nm
Used for photoresponse measurements.
-
登录查看剩余8件设备及参数对照表
查看全部
