研究目的
Investigating the fabrication and performance of turbostratic stacked CVD graphene photodetectors using the photogating effect, with the aim of demonstrating high responsivity.
研究成果
The use of turbostratic stacked CVD graphene significantly enhances the responsivity of graphene photodetectors through the photogating effect, with a roughly twofold increase in photoresponse compared to monolayer graphene devices. This approach is promising for the development of low-cost, high-responsivity photodetectors.
研究不足
The study is limited by the saturation of mobility improvement at three layers of turbostratic stacked graphene and the logarithmic increase in photocurrent with light intensity, suggesting a saturation in the photogating effect at higher intensities.
1：Experimental Design and Method Selection:
The study focused on the use of turbostratic stacked CVD graphene for photodetectors, leveraging its high carrier mobility and linear band dispersion.
2：Sample Selection and Data Sources:
Monolayer graphene was synthesized via CVD on Cu foil and transferred to a SiO2/p-type-Si substrate. Turbostratic stacked graphene was created by repeated transfer of graphene monolayers.
3：List of Experimental Equipment and Materials:
CVD setup for graphene synthesis, poly(methyl methacrylate) (PMMA) for transfer, Ni and Au for electrodes, and a 642 nm diode laser for photoresponse measurement.
4：Experimental Procedures and Operational Workflow:
Graphene was synthesized, transferred, and stacked. Electrodes were deposited, and the graphene channel was defined. Photoresponse was measured under various conditions.
5：Data Analysis Methods:
Field effect mobility was calculated, and photocurrent response was analyzed as a function of back-gate voltage and light intensity.
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