研究目的
Investigating the improvement of low bandgap tin lead perovskite solar cells via contact engineering and gas quench processing to achieve higher efficiency and stability.
研究成果
The study demonstrates that gas quenching can replace antisolvent dripping for Sn/Pb perovskite compositions, leading to improved film quality and device performance. MA-free and PEDOT:PSS-free devices achieved up to 20% efficiency, with good thermal stability.
研究不足
The study focuses on MA-free compositions and PTAA as HTL, which may not cover all possible variations in perovskite compositions and HTL materials. The scalability of the gas quenching process to industrial levels needs further investigation.
1：Experimental Design and Method Selection:
The study employs a gas quenching process for film growth instead of conventional antisolvents, using a MA-free composition of FA
2：75Cs25Sn5Pb5ISample Selection and Data Sources:
ITO-coated substrates are used, either directly for HTL-free devices or coated with an HTL.
3：List of Experimental Equipment and Materials:
Includes PTAA as the hole transport layer, nitrogen gas for quenching, and various solvents like DMF and DMSO.
4：Experimental Procedures and Operational Workflow:
The perovskite solution is dispensed on the substrate, followed by gas quenching during spin-coating and annealing at 120°C.
5：Data Analysis Methods:
XRD, FTIR, optical profilometry, and SEM are used for structural and morphological analysis.
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