摘要： The power-conversion efficiency (PCE) of single-junction organic solar cells (OSCs) has exceeded 16% thanks to the development of non-fullerene acceptor materials and morphological optimization of active layer. In addition, interfacial engineering always plays a crucial role in further improving the performance of OSCs based on a well-established active-layer system. Doping of graphitic carbon nitride (g-C3N4) into poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as a hole transport layer (HTL) for PM6:Y6-based OSCs is reported, boosting the PCE to almost 16.4%. After being added into the PEDOT:PSS, the g-C3N4 as a Bronsted base can be protonated, weakening the shield effect of insulating PSS on conductive PEDOT, which enables exposures of more PEDOT chains on the surface of PEDOT:PSS core-shell structure, and thus increasing the conductivity. Therefore, at the interface between g-C3N4 doped HTL and PM6:Y6 layer, the charge transport is improved and the charge recombination is suppressed, leading to the increases of fill factor and short-circuit current density of devices. This work demonstrates that doping g-C3N4 into PEDOT:PSS is an efficient strategy to increase the conductivity of HTL, resulting in higher OSC performance.