研究目的
To demonstrate the epitaxial growth of CdTe films on mica substrates using the vapor transport deposition (VTD) process and to develop a water-assisted transfer process for transferring the epitaxial CdTe film from mica onto another substrate for solar cell fabrication, aiming to improve the specific power of solar cells by using lightweight flexible substrates.
研究成果
High-quality epitaxial CdTe films were successfully grown on mica substrates using the VTD process and transferred to flexible SU-8 substrates without damage. The all-epitaxial CdS/CdTe solar cells fabricated through this method showed a power conversion efficiency of 9.59%, with lower interface defects, longer PL lifetime, and higher diode quality compared to poly-CdS/epi-CdTe solar cells. This demonstrates the potential of epitaxial films for flexible electronic devices.
研究不足
The flexible SU-8 photoresist substrate cannot withstand post-annealing temperatures above 200 °C, which limits the improvement of the front contact of ITO electrodes and thus the fill factor and efficiency of the solar cells. Additionally, the interface between the epitaxial film and the mica substrate, while weak, may still have a chemical interaction component that could affect the transfer process.
1：Experimental Design and Method Selection:
The CdTe thin films were grown on mica substrates by a VTD process using CdTe polycrystalline powder as the precursor. The growth conditions were optimized by varying the source temperature (Tsource), substrate temperature (Tsub), and chamber pressure (P).
2：Sample Selection and Data Sources:
Freshly cleaved mica substrates were used for the epitaxial growth of CdTe films.
3：List of Experimental Equipment and Materials:
A single temperature zone quartz tube furnace for VTD, CdTe polycrystalline powder (Sigma-Aldrich,
4：98% purity), and SU-8 photoresist (Microchem, SU-8 3050) for the flexible support substrate. Experimental Procedures and Operational Workflow:
The CdTe powder was placed in a crucible inside the VTD system, and the mica substrate was placed at the right end of the heater. The system was purged with argon gas before heating. After growth, a SU-8 photoresist layer was spin-coated on the CdTe surface, cured under UV light, and then the stack was immersed in DI water to separate the SU-8/CdTe from the mica substrate.
5：Data Analysis Methods:
XRD, SEM, AFM, EBSD, J-V curves, EQE, C-V profiling, and DLCP were used to characterize the films and devices.
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Keithley 2400 Source Meter
2400
Keithley
Used for acquiring the current density-voltage (J-V) curves of the devices.
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Keithley 4200 semiconductor characterization system
4200
Keithley
Used for capacitance-voltage (C-V) profiling and deep-level capacitance profiling (DLCP).
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Bruker D8 Discover X-ray diffractometer
D8 Discover
Bruker
Used for XRD measurements to characterize the epitaxial CdTe films.
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Zeiss Supra 55 SEM
Supra 55
Zeiss
Used for SEM imaging of the CdTe films.
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Carl Zeiss Ultra 1540EsB SEM-FIB system
Ultra 1540EsB
Carl Zeiss
Used for EBSD measurements of the CdTe films.
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CdTe polycrystalline powder
Sigma-Aldrich
Used as the precursor for the vapor transport deposition of CdTe thin films.
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SU-8 photoresist
SU-8 3050
Microchem
Used as a flexible support substrate for the transfer of CdTe films.
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PSI XE100 AFM
XE100
PSI
Used for AFM characterization of the CdTe films.
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Oriel Model 9119 xenon light source
9119
Oriel
Used for simulated AM 1.5G illumination for J-V measurements.
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Newport Oriel Cornerstone 130 1/8 Monochromator
74004
Newport
Used for splitting light into specific wavelengths for EQE measurements.
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Standard silicon detector
70356_70316NS_302
Used for calibration during EQE measurements.
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Picoquant 405 nm pulsed laser
Picoquant
Used for photoluminescence (PL) measurements.
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Princeton Instruments SP-2358 spectrograph
SP-2358
Princeton Instruments
Used for PL measurements.
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Thorlabs 4 megapixel monochrome scientific CCD camera
Thorlabs
Used for PL measurements.
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