研究目的
To design and fabricate a high-performance silicon photoconductive terahertz detector on sapphire substrates at room temperature, addressing the 'terahertz gap' challenge and improving upon existing THz detector technologies.
研究成果
The fabricated silicon photoconductive terahertz detector on sapphire substrates demonstrates excellent performance at room temperature, with high responsivity, low NEP, and fast response time. This advancement provides a promising approach for the development of sensitive THz detectors suitable for imaging and communication applications.
研究不足
The study focuses on a specific range of THz frequencies (266–358 GHz and 624–712 GHz) and does not explore the detector's performance across the entire THz spectrum. The fabrication process, while compatible with silicon technology, may require optimization for large-scale production.
1：Experimental Design and Method Selection:
The detector is based on the electromagnetic induced well (EIW) theory, utilizing a metal-semiconductor-metal (MSM) structure with a subwavelength gap for sensitive THz detection.
2：Sample Selection and Data Sources:
The detector is fabricated on a sapphire substrate with a top layer of n-type silicon.
3：List of Experimental Equipment and Materials:
Includes reactive ion etching (RIE) for etching, magnetron sputtering for electrode deposition, and a Keithley 4200 parameter analyzer for I-V characteristics.
4：Experimental Procedures and Operational Workflow:
The fabrication involves photolithography, RIE, and sputtering of Au electrodes. Performance is measured using a THz source and a power meter.
5：Data Analysis Methods:
Responsivity and noise equivalent power (NEP) are calculated from measured photovoltage and noise spectra.
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