研究目的
Investigating the blinking suppression mechanism of organic-inorganic formamidinium lead halide perovskite quantum dots on N-Type semiconductors to optimize their utilization in optoelectronic devices.
研究成果
The study demonstrates efficient blinking suppression of FAPbBr3 PQDs on TiO2 substrates at room temperature, primarily due to the filling of trap states by electrons from TiO2 and the introduction of extra non-radiative electron transfer pathways. This finding provides significant insights into the charge carrier transport between PQDs and TiO2, which is crucial for the practical applications of PQD-based optoelectronic devices.
研究不足
The study is limited to room temperature observations and does not explore the effects of varying temperatures on blinking suppression. Additionally, the impact of different n-type semiconductors other than TiO2 is not investigated.
1:Experimental Design and Method Selection:
The study investigates the blinking behaviors of single formamidinium bromide perovskite quantum dots (FAPbBr3 PQDs) on the n-type TiO2 substrate using a confocal microscope system with a pulse laser for excitation and avalanche photodiodes for photon detection.
2:Sample Selection and Data Sources:
FAPbBr3 PQDs were synthesized and spin-coated onto bare glass or TiO2 substrates.
3:List of Experimental Equipment and Materials:
A pulse laser (380 nm wavelength, 76 ps pulse width, and 20 MHz repetition rate), oil objective lens (Nikon Plan Apo VC, 100×, NA =
4:40), avalanche photodiodes (APDs, SPCM-AQ4C, PerkinElmer), and PicoHarp300 (PicoQuant) for time-tagged time-resolved single photon counting. Experimental Procedures and Operational Workflow:
Single PQDs were excited, and emitted photons were collected and analyzed using MATLAB and ORIGIN 2016 software.
5:Data Analysis Methods:
The data were analyzed for PL intensity time trajectories, fluorescence lifetime intensity distribution, and second order photon correlation function.
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