研究目的
To investigate the potential of lead-free double perovskites for fabricating UV-protective transparent photovoltaic devices with high visible transmittance and considerable energy conversion efficiency.
研究成果
The study successfully demonstrated the fabrication of UV-protective transparent photovoltaic devices based on lead-free double perovskite Cs2AgBiBr6, achieving a PCE of 1.56% and an AVT of 73%. The research highlights the potential of indirect bandgap materials for TPV applications, offering a new route to achieve highly transparent and well-performed photovoltaics.
研究不足
The efficiency of Cs2AgBiBr6 based devices is still lower than the theoretical prediction, influenced by non-radiative recombination induced by high defect density and giant electron-phonon coupling. The less ideal cutoff wavelength of 450 nm also causes loss of transmittance.
1:Experimental Design and Method Selection:
The study employed lead-free halide double perovskites with wide bandgap and indirect bandgap character for fabricating transparent photovoltaic devices. The methodology included spin-coating assisted by a low-pressure post treatment process for film fabrication.
2:Sample Selection and Data Sources:
Cs2AgBiBr6 thin films were selected as the light-harvesting material. The optical and photovoltaic properties were measured and analyzed.
3:List of Experimental Equipment and Materials:
The study used spin-coating for film deposition, a small-scale vacuum chamber for post-treatment, and various characterization techniques including SEM, XRD, and UV-Vis spectroscopy.
4:Experimental Procedures and Operational Workflow:
The fabrication process involved spin-coating the precursor solution on the substrate, followed by low-pressure post-treatment to accelerate solvent volatilization and enhance crystallization.
5:Data Analysis Methods:
The performance of the devices was evaluated based on power conversion efficiency (PCE) and average visible transmittance (AVT). Theoretical calculations were performed to assess the potential of indirect bandgap materials for TPV applications.
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