研究目的
To explore the properties and use of polycrystalline GaInP as a stable, low-cost, 1.6–1.8 eV top-cell material for two-junction (tandem) solar cells, particularly in combination with a silicon bottom cell.
研究成果
An aluminum-assisted post-deposition treatment (Al-PDT) introduced in this study for passivation of surfaces and grain boundaries in GaInP improves the minority-carrier properties. The Al-PDT of polycrystalline Ga0.37In0.63P films with a 1.7-eV bandgap results in a 90-fold increase in the peak photoluminescence, a 220-fold increase in integrated PL intensity, and an increase in time-resolved PL lifetime from <2 ns to 44 ns. This process may also be able to be extended to other polycrystalline III–V materials.
研究不足
The study focuses on the properties and passivation of polycrystalline GaInP films. The cost benefits of polycrystalline semiconductor films compared to single-crystal growth need to be confirmed. The uniformity and chemical bonding configuration of the Al-containing compound at the surface of these polycrystalline films after Al-PDT are not presently known.
1：Experimental Design and Method Selection:
Polycrystalline GaInP thin films were prepared by coevaporation of Ga, In, and P on thermally grown SiO2 films on crystalline Si substrates. The film composition and deposition temperature were varied to determine their effects on grain size, morphology, and photoluminescence (PL).
2：Sample Selection and Data Sources:
GaInP films were grown with Ga/(Ga + In) composition ratios of 0, 0.05, 0.1, 0.15, 0.25, 0.37, and 0.5, without intentional doping.
3：05, 1, 15, 25, 37, and 5, without intentional doping.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Veeco Gen III MBE system for film growth, PANalytical X-pert Pro MRD high-resolution X-ray diffractometer for XRD, Philips XL30 environmental scanning electron microscope for SEM, Andor 750 spectrometer for steady-state PL spectroscopy, time-correlated single-photon counting system for TRPL spectroscopy.
4：Experimental Procedures and Operational Workflow:
Films were grown at substrate temperatures of 360 °C and 435 °C. Some films underwent Al-assisted post-deposition treatment. Structural and recombination properties were characterized.
5：Data Analysis Methods:
XRD data were background-corrected and treated with the Rachinger correction. PL spectra were fitted with bi-Gaussian curves.
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