摘要： Near-infrared (NIR) light with a wavelength of 650–950 nm is used for various biomedical applications. Although NIR emitters are typically based on GaAs-related materials, they contain toxic elements, and the emission wavelength can easily shift during the device operation due to temperature changes and current injection levels. On the other hand, Tm3t, which is one of the rare-earth ions, can generate ultra-stable NIR luminescence with a wavelength of (cid:1)800 nm, based on 3H4 – 3H6 transitions in a 4f shell, and we have recently focused on Tm-doped GaN (GaN:Tm) based light-emitting diodes (LEDs) as novel NIR emitters. In this paper, we present a demonstration of a NIR-LED based on GaN:Tm grown by the organometallic vapor phase epitaxy method with optimized growth conditions and structures, where the parasitic reaction is well suppressed. NIR luminescence from the GaN:Tm-based LED is derived from 3H4 – 3H6 transitions of Tm3t ions and consists of three dominant peaks at 795, 806, and 814 nm. The turn-on voltage of the NIR-LED is (cid:1)6:9 V, and it is significantly lower than the previously reported electroluminescent devices based on GaN:Tm with impact ionization processes. From a current dependence of the electroluminescence spectra and temperature-dependent photoluminescence for the NIR-LED, the peak shifts are determined to be ,7:6 pm/mA and (cid:1)1:3 pm/K, respectively.