研究目的
Investigating the charge transport mechanism in BaTiO3 thin film deposited on LaNiO3 buffer layer using pulsed laser deposition technique and comparing it with La0.67Ca0.33MnO3 buffered BTO film.
研究成果
The study concluded that the charge transport mechanism in BTO/LNO junction is space charge limited conduction (SCLC) with higher current density, lower activation energy, lower trap density, and higher ratio of free to trapped carriers compared to BTO/LCMO. The lower activation energy indicates the presence of shallow trap levels.
研究不足
The study was limited to a temperature range of 240–300 K for comparative analysis with previous studies. The absence of Ohmic region in Log J-Log V plot indicates higher injection rate, which may not be fully explained by the current model.
1：Experimental Design and Method Selection:
The study involved the deposition of BaTiO3 thin film on LaNiO3 buffer layer using pulsed laser deposition technique to form a metal-insulator-metal junction. The temperature-dependent Current density-Voltage (J-V) characteristics were measured and analyzed.
2：Sample Selection and Data Sources:
The samples consisted of 200-nm-thick BTO film deposited on 50-nm thick LNO buffer layer on (001) oriented STO single crystal substrate.
3：List of Experimental Equipment and Materials:
KrF excimer (wavelength = 248 nm) based pulsed laser deposition technique was used for thin-film deposition.
4：Experimental Procedures and Operational Workflow:
The J-V characteristics were measured in a closed-cycle refrigerator with voltage bias applied on the top electrode (Au) and the bottom electrode kept as ground.
5：Data Analysis Methods:
The conduction mechanism was analyzed using space charge limited conduction (SCLC) theory, and parameters such as trap density, activation energy, and ratio of free to trapped carriers were extracted from the fitted J-V plots.
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