研究目的
Investigating the impact of laser treatment on the hydrogen distribution and optoelectronic properties of hydrogenated amorphous silicon films.
研究成果
The study demonstrates that laser treatment can significantly reduce the hydrogen concentration in the surface-near region of hydrogenated amorphous silicon films without major impact on their optoelectronic properties. The hydrogen outdiffusion is primarily dependent on the maximum process temperature, allowing for tailored manipulation of film properties by proper choice of laser parameters.
研究不足
The study is limited by the use of a single Arrhenius dependence of the hydrogen diffusion coefficient for the whole hydrogen effusion process, which is a simplification. Additionally, the Raman spectroscopy system used has a detection limit for hydrogen concentration.
1：Experimental Design and Method Selection:
The study involves the application of laser radiation to modify the hydrogen distribution within hydrogenated amorphous silicon films. Both continuous wave (CW) and pulsed laser sources at a wavelength of 532 nm were used.
2：Sample Selection and Data Sources:
Hydrogenated amorphous silicon layers with a thickness of ~350 nm deposited on Corning Eagle XG? substrates by plasma-enhanced chemical vapor deposition (PECVD) were studied.
3：List of Experimental Equipment and Materials:
A high-power Q-switched diode pumped solid state slab laser (Edgewave HD30II-E Innoslab) with a wavelength of 532 nm was used for thermal laser annealing. The sample temperature was monitored with a LumaSense IMPAC IN 5/5 plus pyrometer.
4：Experimental Procedures and Operational Workflow:
Laser treatments were performed in ambient atmosphere. The conditions for CW treatment and the use of a pulsed laser with a pulse duration of 7 ns at a repetition rate of 40 kHz are detailed.
5：Data Analysis Methods:
The influence of the laser treatment on hydrogen diffusion was studied by secondary ion mass spectrometry (SIMS) measurements, on hydrogen concentration by both SIMS and Raman spectroscopy, and on optoelectronic properties by photo- and dark conductivity measurements and sub-bandgap absorption measurements.
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