研究目的
Investigating the effects of a composition-graded AlGaN last quantum barrier on the performance of deep-ultraviolet light-emitting diodes (DUV LEDs) to enhance electron blocking and hole injection efficiency.
研究成果
The proposed IAC graded LQB structure significantly improves the performance of DUV LEDs by enhancing electron blocking and hole injection efficiency. The thickness of the graded LQB plays a crucial role in determining the band bending and, consequently, the device's optical performance. This study provides valuable insights for the development of highly efficient AlGaN-based DUV LEDs.
研究不足
The study is based on numerical simulations, and the actual fabrication and testing of the proposed DUV LED structure may present challenges not accounted for in the simulation. The polarization charge is theoretically set to 50%, which may not fully account for defects, dislocations, and interface charge compensation in real devices.
1：Experimental Design and Method Selection:
The study proposes a linearly Increased-Al-composition (IAC) graded AlGaN LQB to replace the conventional flat LQB in DUV LEDs. The design aims to reduce the effective barrier height for hole injection while improving electron blocking ability.
2：Sample Selection and Data Sources:
The reference sample (Sample A) is an AlGaN-based DUV LED emitting at 284.5 nm. Sample B has the same structure as Sample A but with an IAC graded LQB.
3：5 nm. Sample B has the same structure as Sample A but with an IAC graded LQB.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: The samples were numerically investigated using the Advance Physical Model of Semiconductor Devices (APSYS) simulation program.
4：Experimental Procedures and Operational Workflow:
The simulation setup includes parameters such as band offset ratio, radiative recombination coefficient, Auger recombination coefficient, and Shockley–Read–Hall (SRH) recombination lifetime.
5：Data Analysis Methods:
The study analyzes the radiative recombination rate, carrier distributions, internal quantum efficiency (IQE), leakage current, and electroluminescence (EL) to evaluate the performance enhancement.
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