研究目的
Investigating the effect of an applied high voltage across the thickness of a soda-lime glass substrate of CIGS thin-film solar cells and the role of the molybdenum back contact in potential induced degradation.
研究成果
The study demonstrates that modifying the molybdenum back contact can significantly improve the PID stability of CIGS solar cells. PID-susceptible cells showed degradation after a certain amount of charge transfer, while cells with an optimized Mo back contact exhibited increased stability against PID. The findings suggest that the properties of the Mo back contact play a crucial role in the PID behavior of CIGS solar cells.
研究不足
The study focuses on the effect of the Mo back contact on PID in CIGS solar cells and does not explore other potential factors that could influence PID. The experimental conditions, such as the controlled climate chamber settings, may not fully replicate all real-world environmental conditions.
1：Experimental Design and Method Selection:
The study involved applying a high voltage (1 kV) across the thickness of a soda-lime glass substrate of CIGS thin-film solar cells to investigate PID. Two types of CIGS cells, differing only in the deposition process of the Mo back contact, were tested.
2：Sample Selection and Data Sources:
Two types of CIGS cells were used, with the only difference being the deposition process of the Mo back contact. The cells were processed on soda-lime glass.
3：List of Experimental Equipment and Materials:
Equipment included a power supply unit for applying the high voltage bias, measuring devices for high voltage current, a climate chamber for controlled testing conditions, and various analytical tools like SEM, EDX, TEM/STEM, EBIC, GDOES, and CV profiling.
4：Experimental Procedures and Operational Workflow:
The cells were exposed to a high voltage bias in a controlled environment to study PID. Measurements were taken at different stages of exposure to analyze the effects on the cells.
5：Data Analysis Methods:
The data was analyzed using techniques like CV profiling, EBIC measurements, and GDOES to understand the changes in the cells' properties under high voltage stress.
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impedance analyzer
Keithley 4200-SCS with a 4210-CVU card for AC measurements
Keithley
Performing CV profiling
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power supply unit
FUG-type HCP 350-12500MOD
Applying the 1000 V positive or negative bias
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measuring devices
I-7017
IPC2U GmbH
Measuring the high voltage current
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climate chamber
Feutron-type 3436/15
Conducting tests at low humidity (10%)
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conducting graphite paint
Cramolin GRAPHIT 1281411
ITW Chemische Produkte GmbH & Co. KG
Spray-covered the backside of the substrate glass
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high-resolution scanning electron microscopy
XL30 SFEG system
FEI Deutschland GmbH
Characterizing microscopic film morphology
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energy-dispersive X-ray spectroscopy
EDAX Team Apollo X in HR-SEM
Analyzing surface film composition
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FIB lamellae
Zeiss Crossbeam 1540 with Cryo-Stage
Preparing for Mo characterization
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high-resolution transmission electron microscope
Jeol ARM 200F
Performing STEM images and EDX
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GDOES measurements
GDOES Profiler 2
Horiba Jobin Yvon
Measuring with an RF source
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