研究目的
Investigating the light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using finite-difference time-domain method to optimize their performance.
研究成果
The NPSS technology significantly improves the LEE of AlGaN-based DUV LEDs by expanding the extraction angles at both top surface and sidewalls, making it more efficient than roughening on the backside of n-AlGaN surface. This finding is crucial for the development of high-performance DUV LEDs.
研究不足
The study does not consider the effects of electrodes, area of active layer, and current spreading on LEE. The simulation model is simplified due to computational limitations, which may not fully capture the complexity of actual DUV LED structures.
1：Experimental Design and Method Selection:
The study uses finite-difference time-domain (FDTD) method to simulate the LEE of AlGaN-based DUV LEDs with different substrate configurations.
2：Sample Selection and Data Sources:
The simulation models include DUV LED on flat sapphire substrate (FSS), DUV LED on nano-patterned sapphire substrate (NPSS), and thin-film flip-chip DUV LED with roughening on the backside of n-AlGaN surface.
3：List of Experimental Equipment and Materials:
The simulation involves AlGaN quantum-well, sapphire substrates with and without nano-patterns, and roughened n-AlGaN surfaces.
4：Experimental Procedures and Operational Workflow:
The simulation setup includes placing TE and TM polarized dipoles in the middle plane of the AlGaN quantum-well and analyzing the light extraction angles and efficiency.
5：Data Analysis Methods:
The LEE is calculated for different polarization modes and substrate configurations to compare their effectiveness.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
