研究目的
To review and compare the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection, including material synthesis, representative types, device performance, challenges, and future perspectives.
研究成果
Single III-V semiconductor nanowires have been extensively explored as room temperature high-performance infrared photodetectors with broad detection wavelength range covering UV, VIS, IR, and THz regimes. The review highlights their recent development in materials, structures, and comparative performances, as well as existing challenges and possible future directions.
研究不足
The output current of single nanowire photodetectors is still too low for practical applications. There are challenges in fabricating large-scale and controlled assembly of single nanowires into horizontal arrays. The detection wavelength is determined by the material bandgap, limiting the range for some applications.
