研究目的
Investigating the integration of stress and temperature sensors into silicon solar cells for direct and continuous in situ measurement within photovoltaic modules.
研究成果
The proposed silicon solar cell–integrated stress and temperature sensors are capable of direct and continuous in situ measurement within PV modules, offering potential for research and development applications in monitoring temperature and stress at the solar cell level.
研究不足
The study is a proof of concept with sensors tested in a conventional PV module setup. Further research is needed for implementation into functional solar cells and commercial PV modules, including wireless data transmission and self-powering approaches.
1：Experimental Design and Method Selection:
The study involves the design and implementation of piezoresistive stress sensors and resistive temperature sensors on silicon solar cell wafers using lab-scale silicon solar cell production processes.
2：Sample Selection and Data Sources:
p-type float zone silicon solar wafers with a specific resistance of 1 Ωcm and a thickness of 250 μm were used.
3：List of Experimental Equipment and Materials:
A beamline implanter (VIISta HC, Applied Materials) for implantations, a centrotherm tube furnace E1550 HT 300-4 for annealing, and a stack of titanium, palladium, and silver for metallization.
4：Experimental Procedures and Operational Workflow:
The sensors were characterized using a 4-point bending bridge for stress sensors and a 4-point probe setup for temperature sensors during temperature cycles.
5：Data Analysis Methods:
Linear fits were used to determine the sensitivity of the sensors from the measured resistance changes.
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