研究目的
Investigating the use of aqueous solution processed copper iodide (CuI) as a hole transport material (HTL) in planar inverted perovskite solar cells to understand its impact on device efficiency and stability.
研究成果
The fabrication of perovskite solar cells with solution-processed CuI as HTL demonstrated a device efficiency of 14.1%. The study revealed that deep trap states in the perovskite bulk, induced by CuI, are more detrimental than interface-mediated recombination. Future improvements could involve passivating these defects or preventing elemental diffusion from carrier transport layers.
研究不足
The study highlights the detrimental effects of deep trap states induced by CuI in the perovskite bulk, suggesting challenges in optimizing device parameters and stability. The influence of CuI morphology on perovskite film quality indicates a need for further research on interface engineering.
1：Experimental Design and Method Selection:
The study involved fabricating perovskite solar cells with CuI as the HTL, focusing on the influence of CuI morphology on perovskite film growth and device performance.
2：Sample Selection and Data Sources:
CuI films were prepared with different precursor concentrations (
3：025, 05, and 1 M) and characterized alongside perovskite films grown on these CuI layers. List of Experimental Equipment and Materials:
Included a high-resolution scanning electron microscope (Hitachi, S-4800), Rigaku Smart Lab for XRD, and an LCR meter (E4980A, Agilent) for capacitance spectra.
4：Experimental Procedures and Operational Workflow:
CuI films were spin-coated onto ITO substrates, followed by perovskite film deposition, annealing, and device assembly with PCBM and AZO layers.
5：Data Analysis Methods:
J-V characteristics, EQE measurements, and capacitance spectroscopy were used to analyze device performance and optoelectronic properties.
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