研究目的
To develop an analytical model to study the effect of statistical dopant fluctuations on Vth of JFETs.
研究成果
The presented analytical model can be used for statistical modeling of CJFET VLSI circuits for variability-aware circuit design as well as optimization of device performance to mitigate the risk of process variability in CJFET VLSI circuits.
研究不足
The study focuses on the effect of statistical dopant fluctuations on threshold voltage variability in JFETs, without addressing other potential sources of variability or the impact on other device parameters.
1：Experimental Design and Method Selection:
The study involves deriving a mathematical expression to model the effect of statistical dopant fluctuations on threshold voltage (Vth) of JFETs.
2：Sample Selection and Data Sources:
The model is applied to symmetric and asymmetric source/drain double-gate n-channel JFETs.
3：List of Experimental Equipment and Materials:
Not explicitly mentioned.
4：Experimental Procedures and Operational Workflow:
The model is derived considering the stochastic distribution of dopants for any arbitrary one-dimensional (1D) channel doping profiles.
5：Data Analysis Methods:
The model is used to compute the values of mismatch coefficients and σ Vth,RDD for JFETs with two different types of device structures.
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