摘要： 1.5–1.6 eV bandgap Pb-based perovskite solar cells (PSCs) with 30–31% theoretical efficiency limit by the Shockley–Queisser model achieve 21–24% power conversion efficiencies (PCEs). However, the best PCEs of reported ideal-bandgap (1.3–1.4 eV) Sn–Pb PSCs with a higher 33% theoretical efficiency limit are <18%, mainly because of their large open-circuit voltage (Voc) deficits (>0.4 V). Herein, it is found that the addition of guanidinium bromide (GABr) can significantly improve the structural and photoelectric characteristics of ideal-bandgap (≈1.34 eV) Sn–Pb perovskite films. GABr introduced in the perovskite films can efficiently reduce the high defect density caused by Sn2+ oxidation in the perovskite, which is favorable for facilitating hole transport, decreasing charge-carrier recombination, and reducing the Voc deficit. Therefore, the best PCE of 20.63% with a certificated efficiency of 19.8% is achieved in 1.35 eV PSCs, along with a record small Voc deficit of 0.33 V, which is the highest PCE among all values reported to date for ideal-bandgap Sn–Pb PSCs. Moreover, the GABr-modified PSCs exhibit significantly improved environmental and thermal stability. This work represents a noteworthy step toward the fabrication of efficient and stable ideal-bandgap PSCs.