研究目的
To modulate the bandgap of ternary alloy BeZnO to make the material applicable to solar-blind ultraviolet (UV) radiation detection by preparing amorphous films with high Be doping contents on various substrates.
研究成果
The research successfully demonstrated solar-blind PDs made from amorphous BexZn1-xO with high Be doping content on rigid and flexible substrates, offering sensitive, reproducible detection of solar-blind UV light with fast response and recovery speeds. This work is expected to be guiding significance to the design of PDs with deformability.
研究不足
The study focuses on the fabrication and performance of amorphous BeZnO-based solar-blind UV photodetectors on various substrates, but does not explore the long-term stability or scalability of the fabrication process for commercial applications.
1：Experimental Design and Method Selection:
Amorphous BeZnO thin films were deposited on rigid c-sapphire and flexible PET and PEN substrates at room temperature via pulsed laser deposition (PLD). MSM BeZnO solar-blind UV detectors were constructed by depositing a pair of parallel Al electrodes on the thin films.
2：Sample Selection and Data Sources:
The composition of the BeZnO films were investigated by XPS. AFM was applied to investigate the surface morphology and roughness of the samples. XRD was applied to determine whether the BeZnO thin films were amorphous, and the optical properties were measured by UV-Vis-NIR spectrophotometry.
3：List of Experimental Equipment and Materials:
PLD system, BeZnO target, KrF excimer laser, Al electrodes, XPS (PHOIBOS 150, SPECS), AFM (NT-MDT, Solver Nano), XRD (D8 Discover, Bruker), UV-Vis-NIR spectrophotometer (UV3600 Plus, Shimadzu), Keithley 2635B Source Meter.
4：Experimental Procedures and Operational Workflow:
The BeZnO thin films were grown on substrates by PLD at approximately 30°C. The depositing process was carried out using a BeZnO target at the focused KrF excimer laser. Parallel Al electrodes were deposited on the BeZnO thin films through a shadow mask by vacuum thermal evaporation.
5：Data Analysis Methods:
The current-voltage characteristics, time-dependent photoelectric response, and responsivity of the BeZnO PDs were measured using a Keithley 2635B Source Meter. The optical power was measured using a standard Si photodetector.
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