研究目的
To extend the operating wavelength of the interband transition quantum well photodetector from extended short-wavelength IR to middle-wavelength infrared.
研究成果
The study demonstrated a method to extend the wavelength from short wavelength into middle wavelength of InAsSb/(Al)GaSb quantum wells based on interband transition, with the wavelength peak at 3.026 μm. Type-II structure is necessary for the operating of the photodetector.
研究不足
The high incorporation of Sb in InAsSb epitaxial layer introduces a lattice mismatch with respect to the GaSb substrate, which can degrade the material quality and the performance of the photodetector.
1：Experimental Design and Method Selection:
The energy band structures of InAsSb/(Al)GaSb quantum wells were calculated under the framework of effective-mass approximation.
2：Sample Selection and Data Sources:
InAs
3：91Sb09/GaSb QWs structures with different thickness of quantum well and an InAsSb/AlSb/AlGaSb QWs structure were grown in a V80H solid source molecular beam epitaxy (MBE) system. List of Experimental Equipment and Materials:
V80H solid source MBE system, reflection high energy electron diffraction (RHEED), high resolution X-ray diffraction (XRD), Bruker VERTEX 80 Fourier transform infrared spectrometer.
4：Experimental Procedures and Operational Workflow:
The structures were grown by MBE, characterized by XRD, fabricated into mesa-isolated photodetectors, and tested for photocurrent spectrum.
5：Data Analysis Methods:
The photocurrent spectrum was analyzed to determine the response range and peaks.
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