研究目的
To present a comprehensive model for a CW Raman laser in a silicon-on-insulator (SOI) platform and design a 2.232 μm Raman laser with an on-chip ring resonator cavity.
研究成果
The study presents a comprehensive model for a CW Raman laser in a silicon-on-insulator (SOI) platform and designs a 2.232 μm Raman laser with an on-chip ring resonator cavity. The optimized design shows a threshold power of 16 mW and a slope efficiency of 62%, demonstrating the potential for efficient mid-infrared light sources on silicon photonics platforms.
研究不足
The study is based on numerical simulations and the proposed design needs to be experimentally validated. The performance of the Raman laser is dependent on the reduction of propagation loss and free carriers removal, which may vary in practical implementations.
1：Experimental Design and Method Selection:
The study involves the design and numerical simulation of a Raman laser on SOI for mid-infrared application, including the validation of the model with experimental results from the literature.
2：Sample Selection and Data Sources:
The study uses parameters from the literature for validation and designs a new Raman laser for mid-infrared application.
3：List of Experimental Equipment and Materials:
The study involves the use of silicon-on-insulator (SOI) platform, p-i-n junction for free carriers removal, and tunable directional coupler (DC) for the laser cavity.
4：Experimental Procedures and Operational Workflow:
The study includes numerical analysis of laser characteristics, such as threshold power and output power, and the design of a tunable directional coupler (DC) for the laser cavity.
5：Data Analysis Methods:
The study uses numerical simulations to analyze the laser characteristics and optimize the cavity length and power coupling ratios.
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