研究目的
Investigating the etching of piezoelectric PVDF by means of a 193 nm excimer laser for new applications in integrated bioelectronic devices.
研究成果
The study demonstrated that a 193 nm ArF excimer laser can be used to ablate piezoelectric PVDF, offering a trade-off between etch rate and edge quality. The method allows for the patterning of micromachined piezoelectric transducer structures, with potential applications in integrated bioelectronic devices.
研究不足
The optics path of the beam delivery system for the laser workstation was not configured to apply low fluence pulses, precluding testing close to the ablation threshold of PVDF. The small beam size compared to the working PVDF surface could lead to rough surface morphology at lower repetition rates.
1：Experimental Design and Method Selection:
The study used a 193 nm argon fluoride excimer laser to ablate piezoelectric PVDF. The methodology focused on characterizing the etch rate and quality of the cuts.
2：Sample Selection and Data Sources:
A 2 x 2 cm2 piece of 110 μm, prepoled, β-phase PVDF was used. The sample was bonded to a polished 300 μm-thick Si wafer.
3：List of Experimental Equipment and Materials:
An IPG IX-255 excimer laser system, Anatech Plasma asher, Karl Suss MA6 mask aligner, Finetech Lamda Fineplacer, and Bruker Dektak-XT stylus profiler were used.
4：Experimental Procedures and Operational Workflow:
The PVDF was pretreated with O2 plasma, bonded to the Si wafer, and then ablated with the excimer laser at various fluence values and pulse repetition rates.
5：Data Analysis Methods:
The etch depth was measured indirectly by creating an inverse Sylgard 184 polydimethylsiloxane (PDMS) mold of the etched structures and measuring the heights of the pillars with a stylus profiler.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
